Ge-Source Based L-Shaped Tunnel Field Effect Transistor for Low Power Switching Application
نویسندگان
چکیده
In this work, the performance of heterojunction L-Tunnel Field Effect Transistor (LTFET) has been analyzed with different engineering techniques such as bandgap engineering, pocket work-function and gate dielectric respectively. The electrical characteristics device investigated by using Synopsys Sentaurus TCAD tool compared some recent other TFETs. in terms DC well AC analysis offers ON-state current 2.12*10?5 A?m?1, OFF-state 1.09*10?13 ratio ~108 sub-threshold slope (SS) 21 mV/decade threshold voltage 0.26 V to conventional Si/Ge source L-shaped TFETs without simulation result. suppress leakage degrading ON current, SS proposed device. simplified fabrication steps have also discussed. L-TFET is free from ambipolarity issues can be used develop low-power switching devices.
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ژورنال
عنوان ژورنال: Silicon
سال: 2021
ISSN: ['1876-9918', '1876-990X']
DOI: https://doi.org/10.1007/s12633-021-01475-9